Physical and Chemical Processes in Microelectronic Technology

Major: Electronics
Code of subject: 7.171.03.E.019
Credits: 4.00
Department: Department of Electronic Engineering
Lecturer: Ph.D., Assoc. Kuchmiy Halyna Lyubomyrivna
Semester: 2 семестр
Mode of study: денна
Мета вивчення дисципліни: The purpose of the study of the academic discipline is to expand and generalize the master's degree students' knowledge of basic and special processes in microelectronic technology, to understand the tasks facing technologists of microelectronic production, to familiarize themselves with the features of the application of modern microelectronic technologies in electronic devices and devices in the leading branches of computer science engineering, computer science, telecommunications, medicine and biology, environmental monitoring techniques.
Завдання: Professional competences of a professional direction: FCS 1.2 Ability to solve problems of optimization and updating of electronic means of automation, collection, processing, transmission, storage and display of information. FCS 1.4 Ability to develop technologies for creating materials with predetermined properties and directed modification of their properties. FCS 2.1 Ability to reasonably choose and use existing methods of signal processing and analysis in biomedical systems. FCS 2.3 Create and use modern packages of application programs for information support of diagnostic and treatment processes.
Learning outcomes: GLO 1.3 Apply knowledge of technical characteristics, physical and technological features of creation and improvement of electronic devices. GLO 1.4 Perform calculations of predicted parameters and characteristics of electronic equipment according to the given algorithms.
Required prior and related subjects: Prerequisites: Physics. Physical foundations of electronic equipment. Materials and structures of nanoelectronics. Co-requisites: Microcircuitry.
Summary of the subject: The program of the study discipline "Physico-chemical processes in microelectronic technology" is designed for students of the Institute of Telecommunications, Radio Electronics and Electronic Engineering, who are majoring in Electronics. The educational discipline is devoted to the study of methods of obtaining, cleaning and alloying of single-crystalline, polycrystalline and amorphous materials, as well as methods of controlling technological processes, materials and structures of microelectronics.
Опис: Development of modern microelectronic technology, its application in the production of electronic devices and devices. Basic materials for microelectronic devices. Mechanical processing of crystals of semiconductor materials. Diffusion in semiconductors. Ionic doping. Lithographic processes in the technology of microelectronic devices. Microporous structures. Physico-chemical processes, in the technology of multi-level switching elements, multi-level switching in hybrid and single-crystal VIS. Physico-chemical processes in the technology of devices on alternative materials - silicon carbide, organic materials, etc. Methods of control of technological processes, materials and structures of microelectronic equipment.
Assessment methods and criteria: Current control: performance of practical work, performance of control work. Final control: final control work.
Критерії оцінювання результатів навчання: Distribution of points on a 100-point scale. Current control: Auditory work - 70 points: (performance of practical work - 20 points; credit control work - 50 points). Independent work - 30 points.
Порядок та критерії виставляння балів та оцінок: 100–88 points – (“excellent”) is awarded for a high level of knowledge (some inaccuracies are allowed) of the educational material of the component contained in the main and additional recommended literary sources, the ability to analyze the phenomena being studied in their interrelationship and development, clearly, succinctly, logically, consistently answer the questions, the ability to apply theoretical provisions when solving practical problems; 87–71 points – (“good”) is awarded for a generally correct understanding of the educational material of the component, including calculations, reasoned answers to the questions posed, which, however, contain certain (insignificant) shortcomings, for the ability to apply theoretical provisions when solving practical tasks; 70 – 50 points – (“satisfactory”) awarded for weak knowledge of the component’s educational material, inaccurate or poorly reasoned answers, with a violation of the sequence of presentation, for weak application of theoretical provisions when solving practical problems; 49-26 points - ("not certified" with the possibility of retaking the semester control) is awarded for ignorance of a significant part of the educational material of the component, significant errors in answering questions, inability to apply theoretical provisions when solving practical problems; 25-00 points - ("unsatisfactory" with mandatory re-study) is awarded for ignorance of a significant part of the educational material of the component, significant errors in answering questions, inability to navigate when solving practical problems, ignorance of the main fundamental provisions.
Recommended books: Basic literature: 1. Фізичні основи електроніки: курс лекцій: навч. посіб. для студ. спеціальності 171 «Електроніка» / КПІ ім. Ігоря Сікорського; уклад.: К.С. Дрозденко, – Електронні текстові данні. – Київ: КПІ ім. Ігоря Сікорського, 2021. – 153 с. 2. Теплові процеси в електроніці / Ю.Я. Бобало, В. Вуйцік, З.Ю. Готра, Т. Голець, В. Каліта, В.І. Лозбін, І.С. Романюк; за ред. З.Ю. Готри. – Львів: Ліга-Прес, 2007. – 320 с. (монографія). 3. Мікроелектронні сенсори фізичних величин: Науково-навчальне видання. В 3 томах. Том 3. Книга 1 /Вуйцік В., Готра З.Ю., Готра О.З., Григор’єв В.В., Каліта В., Мельник О.М., Потенцкі Є., Черпак В.В.; За редакцією З.Ю. Готри. – Львів: Ліга-Прес, 2007. – 249 с. Supporting literature: 1. Основи електроніки : навч. посіб. / А. С. Васюра, Г. Д. Дорощенков, В. П. Кожем’яко, Г. Л. Лисенко. – Вінниця : ВНТУ, 2018. – 197 с.
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