Electron And Quantum Microwave Ddevices

Major: Telecommunications and Radio Engineering
Code of subject: 6.172.03.E.103
Credits: 4.00
Department: Radioelectronic Appliances and Systems
Lecturer: d. s. Valeriy Oborzhytskyy
Semester: 6 семестр
Mode of study: денна
Learning outcomes: As a result of study of the module a student must: a) to know a principle of work and feature of the electron and quantum microwave devices; b) to be able to apply the acquired knowledge to calculation of microwave electron devices and to development of schemas with their usage.
Required prior and related subjects: Prerequisites: physics; fundamentals of electrodynamics wave theory; methods of signal generation and formation. Co-requisites: methods of signal reception and processing
Summary of the subject: Classification and physical bases of microwave electron devices. Quasistationary microwave electron devices (triodes, tetrodes). Vacuum devices with dynamic short-term management: klystrons, gyrotrons. O-type devices: traveling wave tubes (TWT), backward wave tubes (BWT). M-type devices: magnetrons, amplitron, M-type traveling wave tubes (MTWT), M-type backward wave tubes (MBWT). Semiconductor devices: microwave transistors – bipolar, field effect (MESFET, HEMT, PHEMT, MOSFET); p-n junction diodes, Schottky diodes, Gunn diodes, varactors, avalanche diode IMPATT, PIN diodes. MEMS and metamaterials in microwave electronics. Physical bases of quantum electron devices. Microwave (masers) and optical (lasers) quantum devices.
Assessment methods and criteria: • Current control (40%): verbal questioning, solution of tasks and calculations, preparation of reports on the laboratory works; • Final control (60% differential test)
Recommended books: Bases of microwave electronics: manual / V. I. Molchanov, Yu. M. Poplavko (in Ukrainian). – K.: NTUU "KPI", 2010. – 348 p. • Shmatko A. A. Electronic devices of ultrahigh frequencies. Bases of the theory and radio physical laboratory practical work: the ed. guid. / A. A. Shmatko (in Russian). – Kharkiv: V. N. Karazin KhNU, 2006. – 328 p. • Kasatkin L. V. Semiconductor devices of the range of millimeter waves /L. V. Kasatkin, V. E. Chaika. – Sevastopol: Weber (in Russian), 2006. — 319 p. • Andrushko L. M. Microwave electronic devices and quantum devices/L. M. Andrushko, N. D. Fedorov (in Russion). – M.: Radio and communication, 1981. – 280 p. • Fedorov N. D. Microwave electronic devices and quantum devices / N. D. Fedorov (in Russian). – M.: Atomizdat, 1979. – 288 p. • Lebedev I. V. Microwave devices and technik. In two toms. / I. V. Lebedev (in Russion). – M.: Vyssh. Shcola, T. 2, 1972. – 310 p. • Panfilov I. P. Electronic and microwave quantum devices: the ed. guid. for higher ed. inst. Module 1 / I. P. Panfilov, Yu. V. Fleyta (in Ukrainian). – Odassa: O. S. Popov ONAC, 2010. – 120 p.

Electron And Quantum Microwave Ddevices

Major: Telecommunications and Radio Engineering
Code of subject: 6.172.04.E.118
Credits: 4.00
Department: Radioelectronic Appliances and Systems
Lecturer: d. s. Valeriy Oborzhytskyy
Semester: 6 семестр
Mode of study: денна
Learning outcomes: As a result of study of the module a student must: a) to know a principle of work and feature of the electron and quantum microwave devices; b) to be able to apply the acquired knowledge to calculation of microwave electron devices and to development of schemas with their usage.
Required prior and related subjects: Prerequisites: physics; fundamentals of electrodynamics wave theory; methods of signal generation and formation. Co-requisites: methods of signal reception and processing
Summary of the subject: Classification and physical bases of microwave electron devices. Quasistationary microwave electron devices (triodes, tetrodes). Vacuum devices with dynamic short-term management: klystrons, gyrotrons. O-type devices: traveling wave tubes (TWT), backward wave tubes (BWT). M-type devices: magnetrons, amplitron, M-type traveling wave tubes (MTWT), M-type backward wave tubes (MBWT). Semiconductor devices: microwave transistors – bipolar, field effect (MESFET, HEMT, PHEMT, MOSFET); p-n junction diodes, Schottky diodes, Gunn diodes, varactors, avalanche diode IMPATT, PIN diodes. MEMS and metamaterials in microwave electronics. Physical bases of quantum electron devices. Microwave (masers) and optical (lasers) quantum devices.
Assessment methods and criteria: • Current control (40%): verbal questioning, solution of tasks and calculations, preparation of reports on the laboratory works; • Final control (60% differential test)
Recommended books: Bases of microwave electronics: manual / V. I. Molchanov, Yu. M. Poplavko (in Ukrainian). – K.: NTUU "KPI", 2010. – 348 p. • Shmatko A. A. Electronic devices of ultrahigh frequencies. Bases of the theory and radio physical laboratory practical work: the ed. guid. / A. A. Shmatko (in Russian). – Kharkiv: V. N. Karazin KhNU, 2006. – 328 p. • Kasatkin L. V. Semiconductor devices of the range of millimeter waves /L. V. Kasatkin, V. E. Chaika. – Sevastopol: Weber (in Russian), 2006. — 319 p. • Andrushko L. M. Microwave electronic devices and quantum devices/L. M. Andrushko, N. D. Fedorov (in Russion). – M.: Radio and communication, 1981. – 280 p. • Fedorov N. D. Microwave electronic devices and quantum devices / N. D. Fedorov (in Russian). – M.: Atomizdat, 1979. – 288 p. • Lebedev I. V. Microwave devices and technik. In two toms. / I. V. Lebedev (in Russion). – M.: Vyssh. Shcola, T. 2, 1972. – 310 p. • Panfilov I. P. Electronic and microwave quantum devices: the ed. guid. for higher ed. inst. Module 1 / I. P. Panfilov, Yu. V. Fleyta (in Ukrainian). – Odassa: O. S. Popov ONAC, 2010. – 120 p.